SI4412DY siliconix s-49534erev. c, 06-oct-97 1 n-channel 30-v (d-s) rated mosfet product summary v ds (v) r ds(on) ( ) i d (a) 30 0.028 @ v gs = 10 v 7.0 30 0.042 @ v gs = 4.5 v 5.8 so-8 sd sd sd gd 5 6 7 8 top view 2 3 4 1 d s d d g s s d n-channel mosfet absolute maximum ratings ( t a = 25 c unless otherwise noted ) parameter symbol limit unit drain-source voltage v ds 30 v gate-source voltage v gs 20 v continuous drain current (t j = 150 c) a t a = 25 c i d 7.0 continuous drain current (t j = 150 c) a t a = 70 c i d 5.8 a pulsed drain current i dm 30 a continuous source current (diode conduction) a i s 2.3 maximum power dissipation a t a = 25 c p d 2.5 w maximum power dissipation a t a = 70 c p d 1.6 w operating junction and storage temperature range t j , t stg 55 to 150 c thermal resistance ratings parameter symbol limit unit maximum junction-to-ambient a r thja 50 c/w notes a. surface mounted on fr4 board, t 10 sec. updates to this data sheet may be obtained via facsimile by calling siliconix faxback, 1-408-970-5600. please request faxback document #70154. a spice model data sheet is available for this product (faxback document #70552).
SI4412DY 2 siliconix s-49534erev. c, 06-oct-97 specifications (t j = 25 c unless otherwise noted) parameter symbol test condition min typ a max unit static gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 1.0 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = 30 v, v gs = 0 v 2 a zero gate voltage drain current i dss v ds = 30 v, v gs = 0 v, t j = 55 c 25 a on-state drain current b i d(on) v ds 5 v, v gs = 10 v 30 a drain source on state resistance b r ds( ) v gs = 10 v, i d =7.0 a 0.021 0.028 drain - source on - state resistance b r ds(on) v gs = 4.5 v, i d = 3.5 a 0.030 0.042 forward transconductance b g fs v ds = 15 v, i d = 7.0 a 16 s diode forward voltage b v sd i s = 2 a, v gs = 0 v 0.75 1.1 v dynamic a total gate charge q g 19.5 29 gate-source charge q gs v ds = 15 v, v gs = 10 v, i d = 2 a 3.4 nc gate-drain charge q gd 2.7 turn-on delay time t d(on) 9 15 rise time t r v dd = 25 v, r l = 25 12 20 turn-off delay time t d(off) i d 1 a, v gen = 10 v, r g = 6 38 55 ns fall time t f 19 28 source-drain reverse recovery time t rr i f = 2 a, di/dt = 100 a/ s 45 80 notes a. guaranteed by design, not subject to production testing. b. pulse test; pulse width 300 s, duty cycle 2%.
SI4412DY siliconix s-49534erev. c, 06-oct-97 3 typical characteristics (25 c unless otherwise noted) 0 6 12 18 24 30 012345 0 2 4 6 8 10 0 4 8 12 16 20 0 0.4 0.8 1.2 1.6 2.0 50 25 0 25 50 75 100 125 150 0 0.01 0.02 0.03 0.04 0.05 0 6 12 18 24 30 0 300 600 900 1200 1500 0 6 12 18 24 30 0 6 12 18 24 30 0123456 output characteristics transfer characteristics
v ds drain-to-source voltage (v) drain current (a) i d v gs = 10, 9, 8, 7, 6, 5 v 3 v v gs gate-to-source voltage (v) drain current (a) i d t c = 125 c 55 c gate-to-source voltage (v) q g total gate charge (nc) v ds drain-to-source voltage (v) c capacitance (pf) v gs c rss c oss c iss v ds = 15 v i d = 2 a on-resistance ( r ds(on) ) i d drain current (a)
v gs = 10 v i d = 7 a t j junction temperature ( c) (normalized) on-resistance ( r ds(on) ) v gs = 10 v v gs = 4.5 v 25 c 4 v
SI4412DY 4 siliconix s-49534erev. c, 06-oct-97 typical characteristics (25 c unless otherwise noted) 0 10 20 30 40 50 0.01 0.10 1.00 10.00 source-drain diode forward voltage on-resistance vs. gate-to-source voltage threshold voltage single pulse power normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) normalized effective transient thermal impedance on-resistance ( r ds(on) ) v sd source-to-drain voltage (v) v gs gate-to-source voltage (v) source current (a) i s t j temperature ( c) time (sec) power (w) 0 0.02 0.04 0.06 0.08 0.10 0246810 1.0 0.8 0.6 0.4 0.2 0.0 0.2 0.4 50 25 0 25 50 75 100 125 150 t j = 150 c t j = 25 c i d = 7 a i d = 250 a variance (v) v gs(th) 30 10 1 2 1 0.1 0.01 10 4 10 3 10 2 10 1 11030 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 1. duty cycle, d = 2. per unit base = r thja = 50 c/w 3. t jm t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm
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